Photoresist monomers, polymers thereof and photoresist compositons containing the same
AssigneeHynix Semiconductor Inc.
InventorsGeun Su Lee, Jae Chang Jung, Ki Soo Shin
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Abstract
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.
Claims23
A photoresist monomer represented by following Formula 1:
- wherein, l and m are individually integers ranging from 0 to 3:
- X1 and X2 are individually selected from the group consisting of(C1-C10) alkylene, O and S when l ranges from 1 to 3;
- X1 and X2 are individually selected from the group consisting of (C2-C10) alkylene, O and S when l is O:
- and
- Y1, Y2, Y3, Y4, Y5, Y6, Y7 and Y8 are individually selected from the group consisting of halogen, an alkyl partially substituted with halogen, and an alkyl completely substituted with halogen.
A photoresist polymer comprising a repeating unit of the following Formula 4:
- wherein, R1, R2 and R3 are individually selected from the group consisting of H, halogen, (C1-C20) alkyl, (C1-C20) alkyl with halogen substituent(s), (C1-C20) alkyl containing an ether group (—O—), and (C1-C20) alkyl with halogen substituent(s) and containing an ether group;
- R4 is an acid labile protecting group;
- X1 and X2 are individually selected from the group consisting of(C1-C10)alkylene, O and S;
- Y1, Y2, Y3, Y4, Y5, Y6, Y7 and Y8 are individually selected from the group consisting of halogen, an alkyl partially substituted with halogen, and an alkyl completely substituted with a halogen;
- Z is O or S;
- l and m are individually integers ranging from 0 to 3;
- n is 0 or 1;
- and
- the ratio a:b:c falls within the ranges 0-60 mol %:5-80 mol %:0-90 mol %.
A process of preparing a photoresist polymer comprising:
- (a) admixing (i) a compound of Formula 7, and optionally (ii) at least one of the compound of Formula 5 and the compound of Formula 6;
- and
- (b) adding a polymerization initiator into the resultant of step (a) to obtain a repeating unit of Formula 4:
- wherein, R1, R2 and R3 are individually selected from the group consisting of H, halogen, (C1-C20) alkyl, (C1-C20) alkyl with halogen substituent(s), (C1-C20) alkyl containing an ether group, and (C1-C20) alkyl with halogen substituent(s) and containing an ether group;
- R4 is an acid labile protecting group;
- X1 and X2 are individually selected from the group consisting of (C1-C10)alkylene, O and S;
- Y1, Y2, Y3, Y4, Y5, Y6, Y7 and Y8 are individually selected from the group consisting of halogen, an alkyl partially substituted with halogen and an alkyl completely substituted with a halogen;
- Z is O or S;
- l and m are individually integers ranging from 0 to 3;
- n is 0 or 1;
- and
- the ratio a:b:c falls within the ranges 0-60 mol %:5-80 mol %:0-90 mol %.
Dependencies are inferred from the claim text.