Method for forming a pattern and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYasuhiko Sato, Yasunobu Onishi
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Abstract
Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.
Claims21
A method for forming a pattern comprising:
- coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof and represented by the following general formula on a surface of a working film to form a mask,
- wherein R11, R12, and R13, which may be identical or different, are each chosen from a nitrogen atom, a hydrogen atom, and substituted and unsubstituted aliphatic hydrocarbons and aromatic hydrocarbons comprising from 1 to 20 carbon atoms;
- and n is an integer;
- replacing said nitrogen in said mask by oxygen to obtain a silicon oxide-like film;
- forming a resist film on a surface of said silicon oxide-like film;
- forming a resist pattern by subjecting said resist film to a patterning exposure and to a developing treatment;
- transcribing said resist pattern to said silicon oxide-like film to form a masking pattern of said silicon oxide-like film;
- and
- transcribing said masking pattern of said silicon oxide-like film to said working film to for a working film pattern.
A method for manufacturing a semiconductor device comprising:
- forming a working film on a surface of a semiconductor substrate having element regions formed therein;
- coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof and represented by the following general formula on a surface of a working film to form a mask,
- wherein R11, R12, and R13, which may be identical or different, are each chosen from a nitrogen atom, a hydrogen atom, and substituted and unsubstituted aliphatic hydrocarbons and aromatic hydrocarbons and aromatic hydrocarbons comprising from 1 to 20 carbon atoms;
- and n is an integer;
- replacing said nitrogen in said mask by oxygen to obtain a silicon oxide-like film;
- forming a resist film on a surface of said silicon oxide-like film;
- forming a resist pattern by subjecting said resist film to a patterning exposure and to a developing treatment;
- transcribing said resist pattern to said silicon oxide-like film to form a masking pattern of said silicon oxide-like film;
- and
- transcribing said masking pattern of said silicon oxide-like film to said working film to for a working film pattern.
Dependencies are inferred from the claim text.