EUV mask which facilitates electro-static chucking
AssigneeAdvanced Micro Devices, Inc.
InventorsAmr Yehia Abdo, Bruno LaFontaine
Life of this patent
Estimating the term…
Abstract
A lithography mask or reticle and method of making the same is disclosed wherein the fidelity of pattern transfers is enhanced by way of a reduction in the opportunity for contaminating particles to become wedged between the mask and a chuck upon which the mask may rest during semiconductor processing via electrostatic chucking, and also by facilitating heat dissipation within the mask via thermal conductance to mitigate warping of the mask. One or more thermally conductive pads formed within one or more layers applied to the mask facilitate the thermal conductance, and spaces or apertures formed within the layers reduce the potential for particle contamination.
Claims26
A method of making a reflective lithography mask comprising:
- forming a first layer of thermally conductive material over a backside of a substrate of the reflective mask, wherein one or more features to be transferred onto a wafer are formed within one or more layers formed over a topside of the substrate;
- forming a second layer of thermally conductive material over the first layer of thermally conductive material;
- and
- forming one or more thermally conductive pads within the second layer of thermally conductive material.
A method of making a reflective lithography mask comprising:
- forming one or more layers of a thermally conductive material over a backside of a substrate of the reflective mask, wherein one or more features to be transferred onto a wafer are formed within one or more layers formed over a topside of the substrate;
- and
- forming one or more thermally conductive pads within at least one of the layers of thermally conductive material.
A method of making a reflective lithography mask comprising:
- forming one or more thermally conductive pads within a backside of a substrate of the reflective mask, wherein one or more features to be transferred onto a wafer are formed within one or more layers formed over a topside of the substrate, wherein the one or more pads facilitate conducting heat away from the mask to mitigate warping of the mask, wherein the pads are defined by one or more apertures formed within the backside of the substrate, and wherein the apertures mitigate the opportunity for contaminating particles to become lodged between the mask and a flat chuck upon which the mask can rest.
A reflective lithography mask comprising:
- one or more layers of a thermally conductive material formed over a backside of a substrate of the reflective mask, wherein one or more features to be transferred onto a wafer are formed within one or more layers formed over a topside of the substrate;
- and
- one or more thermally conductive pads formed within at least one of the layers of thermally conductive material.
A reflective lithography mask comprising:
- a substrate, wherein one or more features to be transferred onto a wafer are formed within one or more layers formed over a topside of the substrate;
- and
- one or more thermally conductive pads formed within a backside of the substrate, wherein the one or more pads facilitate conducting heat away from the mask to mitigate warping of the mask, wherein the pads are defined by one or more apertures formed within the backside of the substrate, and wherein the apertures mitigate the opportunity for contaminating particles to become lodged between the mask and a flat chuck upon which the mask can rest.
Dependencies are inferred from the claim text.