Epitaxial substrates and semiconductor devices
AssigneeNGK Insulators, Ltd.
InventorsTomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Mitsuhiro Tanaka
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Abstract
A group III nitride film is formed on an epitaxial substrate having an underlayer film containing Al. According to the present invention, the change of the properties of the II nitride film may be reduced The properties of the semiconductor device may be thus reduced and the production yield may be improved. An underlayer 2 made of a group III nitride containing at least Al is formed on a substrate 1 made of a single crystal. An oxide film 3 is formed on the underlayer film 2 to produce an epitaxial substrate 10. The oxygen content of the oxide film 3 at the surface is not lower than 3 atomic percent and the thickness is not larger than 50 angstrom.
Claims7
An epitaxial substrate, comprising a single crystal substrate, an underlayer film provided on said single crystal substrate and substantially made of a nitride of a group III element at least including Al, and an oxide film formed on said underlayer film,
- wherein said oxide film has an oxygen content at the surface of said oxide film of not lower than 3 atomic percent and a thickness of not larger than 50 angstrom.
Dependencies are inferred from the claim text.