Members for semiconductor manufacturing apparatus and method for producing the same
AssigneeTocalo Co., Ltd.
InventorsYukimasa Saito, Hiroshi Sakurai, Kazumi Tani, Kiyoshi Miyajima, Takema Teratani, Tatsuya Hamaguchi
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Abstract
A member for a semiconductor manufacturing apparatus comprises a steel substrate and a composite oxide film formed on a surface thereof and comprised of silicon oxide-aluminum oxide-chromium oxide and a sintering aid.
Claims10
A member for a semiconductor manufacturing apparatus comprising a steel substrate and a composite oxide film formed on a surface thereof and comprised of silicon oxide-aluminum oxide-chromium oxide and a sintering aid.
A method of producing a member for a semiconductor manufacturing apparatus which comprises applying and firing a slurry containing silicon oxide, aluminum oxide and a sintering aid onto a surface of a steel substrate to form a chemically densified film, and then applying or spraying an aqueous solution of chromic acid containing a sintering aid onto a surface of the chemically densified film or immersing in this aqueous solution and firing at 250-750° C. to form a composite oxide film composed of silicon oxide-aluminum oxide-chromium oxide and sintering aid.
Dependencies are inferred from the claim text.