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US 6,805,746 B2Granted
Method for supplying CZ material
AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsManabu Moroishi, Kenichi Takenaka
Life of this patent
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AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsManabu Moroishi, Kenichi Takenaka
Estimating the term…
Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. Above the initially charged poly-silicon raw material, a heat resistant tubular container is placed. The granules/lumps poly-silicon raw material for use in additional charging is charged inot the tubular container. The poly-silicon raw material initially charged into the crucible is melted. The poly-silicon raw material in the tubular container gradually and spontaneously comes down into the crucible, as the bulk of poly-silicon raw material is decreased according to the melting of the initially charged raw material.
A method for supplying CZ raw material in growing single crystals according to the CZ method wherein poly-silicon raw material in a tubular container is additionally fed to a crucible as the melting of the poly-silicon raw material in the crucible proceeds, the tubular container being charged with lumps and/or granules poly-silicon raw material and placed above the poly-silicon raw material initially charged into the crucible in a chamber, the poly-crystal raw material in the tubular container being supported at the bottom by the poly-crystal raw material initially charged into the crucible, and the poly-crystal raw material in the crucible being melted in this state.
Dependencies are inferred from the claim text.