Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
AssigneeMassachusetts Institute of Technology
InventorsAndrew Y. Kim, Eugene A. Fitzgerald
Life of this patent
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Abstract
A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1−y)1−xP alloy layers. The buffer includes a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate, subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1%, and a final alloy layer having a lattice constant that is substantially different from the substrate. The growth temperature of the final alloy layer is at least 20° C. less than the growth temperature of the first alloy layer.
Claims56
A method of forming a semiconductor structure comprising:
- providing a single crystal semiconductor substrate of GaP;
- and
- fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx, (AlyGa1−x)1−xP alloy layers where y is greater than zero, said buffer comprising a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate and a growth temperature greater than 650° C., subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1%, and a final alloy layer having a lattice constant that is substantially different from the substrate, wherein growth temperature of the final alloy layer is at least 20° C. less than the growth temperature of the first alloy layer.
The method of 53, wherein a strain-balancing GaP layer at least 5 microns in thickness is deposited on the light-emitting diode structure.
A semiconductor structure comprising:
- a single crystal semiconductor substrate of GaP;
- and
- a graded composition buffer including a plurality of epitaxial semiconductor InxGa1−xP alloy layers where v is greater than zero, said buffer comprising a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate and a growth temperature greater than 650° C., subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1%, and a final alloy layer having a lattice constant that is substantially different from the substrate, wherein growth temperature of the final alloy layer is at least 20° C. less than the growth temperature of the first alloy layer.
A method of forming a semiconductor structure comprising:
- providing a single crystal semiconductor substrate of GaP;
- and
- fabricating a graded composition buffer including a plurality of epitaxial semiconductor InxGa1−xP alloy layers where v is greater than zero, said buffer comprising a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate, subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1%, and a final alloy layer having a lattice constant that is substantially different from the substrate, wherein growth temperature of the final alloy layer is at least 20° C. less than the growth temperature of the first alloy layer.
Dependencies are inferred from the claim text.