Multiprobe detection system for chemical-mechanical planarization tool

An apparatus used in monitoring a front surface of a wafer during a planarization process, comprising:

• a light source for producing a light signal;
• a plurality of probes adapted to transmit the light signal to, and receive a reflected light signal from, a front surface of a wafer, at least a portion of the plurality of probes configured to be positioned radially relative to the wafer and to move orbitally so that a plurality of overlapping concentric annular bands on the front surface of the wafer is monitored by said at least a portion of the plurality of probes;
• a metrology instrument for measuring the intensity of the reflected light signal;
• a plurality of fiber optic cables for communicating the light signal from the light source to the plurality of probes and for communicating the reflected light signal from the plurality of probes to the metrology instrument;
• and
• a control system in communication with said metrology instrument and configured to independently modify a Parameter of the planarization process in selected ones of said concentric annular bands.

An apparatus used in monitoring a front surface of a wafer during a planarization process, comprising:

• a working surface for planarizing the front surface of a wafer;
• a carrier having a plurality of pressurizable plenums for retaining and pressing the front surface of the wafer against the working surface;
• a light source for producing a light signal;
• a plurality of probes adapted to transmit the light signal to, and receive a reflected light signal from, a plurality of concentric annular bands of a front surface of a wafer, each band corresponding to one of said plenums;
• a metrology instrument for measuring the intensity of the reflected light signal;
• a plurality of fiber optic cables for communicating the light signal from the light source to the plurality of probes and for communicating the reflected light signal from the plurality of probes to the metrology instrument;
• and
• a control system in communication with the metrology instrument and configured to independently adjust the pressure in selected ones of said plurality of pressurizable plenums.

An apparatus used in monitoring the front surface of a wafer and adjusting a planarization process, comprising:

• a source for producing an interrogation signal;
• a directing probe adapted to direct the interrogation signal to a plurality of concentric annular bands of a front surface of a wafer;
• a capturing probe adapted to capture a reflected interrogation signal from the plurality of concentric annular bands of the front surface of the wafer;
• a metrology instrument in communication with the capturing probe;
• a control system in communication with the metrology instrument;
• and
• a multizone carrier in communication with the control system each zone in said multizone carrier corresponding to one of said plurality of concentric annular bands said control system configured to independently modify a parameter of the planarization process in selected ones of said plurality of concentric annular bands.