Heater chip with doped diamond-like carbon layer and overlying cavitation layer

A heater chip for an inkjet printhead, comprising:

• a substrate;
• a resistor layer on the substrate;
• an anode and a cathode on the resistor layer;
• and
• a doped diamond-like carbon layer directly on the resistor layer between the anode and the cathode.

A heater chip for an inkjet printhead, comprising:

• a substrate;
• a resistor layer on the substrate;
• a doped diamond-like carbon layer directly on a surface portion of the resistor layer;
• and
• a cavitation layer directly on the doped diamond-like carbon layer.

An inkjet printhead, comprising:

• a housing;
• a substrate connected to the housing;
• a resistor layer on the substrate;
• a silicon doped diamond-like carbon layer of about 500 to about 3000 angstroms thick directly on the resistor layer;
• and
• one of an undoped diamond-like carbon layer, a tantalum layer and a titanium layer of about 500 to about 6000 angstroms thick directly on the silicon diamond-like carbon layer.

A heater chip heater stack for an inkjet printhead, consisting essentially of:

• a substrate;
• a thermal barrier layer on the substrate;
• a resistor layer on the substrate;
• a conductor layer on the substrate, the conductor layer having an anode and a cathode;
• a doped diamond-like carbon layer directly on a surface portion of the resistor layer between the anode and the cathode, the doped diamond-like carbon layer having a substantially homogeneous composition throughout a thickness thereof;
• and
• a cavitation layer on the doped diamond-like carbon layer, wherein the substrate lacks a silicon carbide and a silicon nitride layer.

An inkjet printhead, comprising:

• a housing with an initial supply of ink;
• and
• a silicon substrate connected with the housing having a heater stack formed of a plurality of thin film layers thereon for ejecting an ink drop from the supply of ink during use, the thin film layers including
• a thermal barrier layer directly on the silicon substrate having a thickness of about 1 to about 3 microns;
• a tantalum-aluminum resistor layer directly on the thermal barrier layer having a thickness of about 1000 angstroms;
• a silicon doped diamond-like carbon layer directly on a portion of the tantalum-aluminum resistor layer having a thickness of about 500 to about 3000 angstroms, a silicon concentration of the silicon diamond-like carbon layer being about 20 to about 25 atomic percent;
• and
• a cavitation layer directly on the silicon diamond-like carbon layer having a thickness of about 500 to about 6000 angstroms.