Fluxless bumping process using ions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hui Lee, Chia-Fu Lin, Chao-Yuan Su, Yeng-Ming Chen, Kai-Ming Chin, Li-Chi Chen, Hao-Chih Tien
Life of this patent
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Abstract
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
Claims28
A process comprising:
- providing a substrate having an electrically conductive non-ball shared structure thereon, the electrically conductive structure including an outer surface including a compound including an oxide group;
- placing the substrate on a hot plate in a chamber, and injecting a gas into the chamber, the gas comprising at least one of:
- molecules comprising a halide atom, and H2:
- and heating the structure with the hot plate so that the gas produces an ion upon contact with the heated structure thereby reacting the oxide group with the ion thereby reducing the melting temperature of the outer surface
- and so that the electrically conductive non-ball shaped structure is reflown and cooling the same to form an electrically conductive ball on the substrate.
A process comprising:
- providing a substrate having a solder non-ball shaped structure thereon, the solder structure including an outer surface including tin oxide;
- placing the substrate on a hot plate to heat the solder and exposing the solder to a gas comprising molecules comprising a halide atom that produces a halide ion upon contact with the solder thereby converting the tin oxide to tin oxy-halide thereby reducing the melting temperature of the outer surface
- to reflow the solder non-ball shaped structure and cooling the same to form an solder ball on the substrate;
- and wherein the converting and heating are conducted simultaneously.
A process comprising:
- providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad;
- forming a fluxless solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide;
- exposing the solder structure to a gas comprising H2;
- reacting the tin oxide with a hydrogen ion produced from the gas to reduce the melting temperature of the outer layer;
- heating the solder structure and cooling the same to provide a solder ball on the semiconductor device.
A process comprising:
- providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad;
- forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide;
- placing the device in a chamber and injecting a gas comprising H2 into the chamber;
- producing a plasma including hydrogen ions, and exposing the solder structure to the plasma;
- heating the solder structure to reflow the same and cooling the same to provide a solder bump on the semiconductor device.
A process comprising:
- providing a substrate having an electrically conductive structure thereon, and wherein the electrically conductive structure includes an outer surface including oxides;
- heating the electrically conductive structure;
- reacting H2 gas with the oxides to produce water;
- heating the electrically conductive structure to reflow the same, and cooling the structure to form an electrically conductive ball on the substrate.
Dependencies are inferred from the claim text.