Cleaning fluid and cleaning method for component of semiconductor-treating apparatus
AssigneesNittou Chemical Industries, Ltd., Tokyo Electron Limited
InventorsKenichi Hirota, Hitoshi Yamada, Kiyoshi Yuasa, Eiji Yamaguchi, Shinichi Kawaguchi, Takahiro Shimoda, Nobuyuki Nagayama
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Abstract
A cleaning solution is used to remove a byproduct derived from a decomposed substance of a process gas containing C and F. The cleaning solution contains 75 wt % N-methyl-2-pyrrolidone, 15 wt % ethylene glycol monobutyl ether, 0.5 wt % surfactant, and 9.5 wt % water. The content of an alkali metal in the cleaning solution is set to be less than 10 ppb.
Claims17
A cleaning solution for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;
- and
- wherein the surfactant contains fluorine and a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.
A cleaning method for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the method comprising:
- removing the component from the process chamber;
- and
- dipping the component in a bath of a cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;
- wherein, in the cleaning solution, a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.
A cleaning solution for removing a byproduct derived from a decomposed substance of a process gas containing C and F, and deposited on a component in a process chamber of a semiconductor processing apparatus for subjecting a target substrate to a semiconductor process with the process gas, the cleaning solution comprising N-methyl-2-pyrrolidone, ethylene glycol monobutyl ether, a surfactant, and water;
- and
- wherein a total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 80 to 90 wt %, and a ratio of a content of the N-methyl-2-pyrrolidone to the total content of the N-methyl-2-pyrrolidone and ethylene glycol monobutyl ether is 0.75 to 0.95.
Dependencies are inferred from the claim text.