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US 6,803,604 B2Granted
Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
AssigneeRicoh Company, Ltd.
InventorsTakashi Takahashi, Shunichi Sato
Life of this patent
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Abstract
An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.
Claims6
An integrated semiconductor light-emitting device, comprising:
- a single crystal semiconductor substrate;
- a surface-emission laser diode;
- and
- a semiconductor electro absorption-type optical modulator having a multiple quantum well layer, said multiple quantum well layer acting as an optical absorption layer,
- said surface-emission laser diode and said semiconductor optical modulator being integrated monolithically on said single crystal semiconductor substrate such that the laser diode and the optical modulator are stacked in a direction perpendicular to said substrate,
- wherein said semiconductor optical modulator is provided inside an optical cavity of said surface-emission laser diode.
3 more elements
An integrated semiconductor light-emitting device, comprising:
- a single crystal semiconductor substrate;
- a surface-emission laser diode;
- and
- a semiconductor electro absorption-type optical modulator having a multiple quantum well layer, said multiple quantum layer acting as an optical absorption layer,
- said laser diode and said semiconductor optical modulator being integrated monolithically on said single crystal semiconductor substrate such that said laser diode and said optical modulator are stacked in a direction perpendicular to said single crystal semiconductor substrate,
- wherein said semiconductor optical modulator is provided inside a distributed Bragg reflector of said surface-emission laser diode.
3 more elements
Dependencies are inferred from the claim text.