US 6,803,598 B1 · Si-based resonant interband tunneling diodes and method of making interband tunneling diodes

Abstract

Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

Claims53

Dependent claims

An interband tunnel diode, comprising:

a bottom injector layer;
a bottom spacer;
a top spacer;
a top injector layer is separated by an offset from the bottom injector, the bottom injector and top injector layers forming the ends of a p-i-n junction;
and
a material inserted between the bottom injector and top injector which serves as a tunnel barrier, and where i in the p-i-n junction represents at least one material provided between the bottom and top injectors.

3 more elements

Dependencies are inferred from the claim text.

Si-based resonant interband tunneling diodes and method of making interband tunneling diodes

Life of this patent

Si-based resonant interband tunneling diodes and method of making interband tunneling diodes

Life of this patent

Abstract

Claims53