Use of high-K dielectric material in modified ONO structure for semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsArvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Nicholas H. Tripsas, Robert B. Ogle
Life of this patent
Estimating the term…
Abstract
A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT™ two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
Claims20
A process for fabrication of a semiconductor device comprising a non-volatile memory cell having a modified ONO structure, comprising forming the modified ONO structure by steps comprising:
- providing a semiconductor substrate;
- forming a first oxide layer on the semiconductor substrate;
- depositing a layer comprising a high-K dielectric material on the first oxide layer;
- and
- forming a top oxide layer on the layer comprising a high-K dielectric material.
A process for fabrication of a semiconductor device, the device including a two-bit EEPROM device including a modified ONO structure, comprising forming the modified ONO structure by steps comprising:
- providing a semiconductor substrate;
- forming a tunnel oxide layer overlying the semiconductor substrate;
- depositing a layer comprising a high-K dielectric material overlying the tunnel oxide layer;
- and
- forming a top oxide layer overlying the layer comprising a high-K dielectric material.
A process for fabrication of a semiconductor device, the device including a floating gate flash structure comprising a modified ONO structure, comprising forming the modified ONO structure by steps comprising:
- providing a semiconductor substrate having a floating gate electrode overlying a tunnel oxide;
- forming a bottom oxide layer overlying the floating gate electrode;
- depositing a layer comprising a high-K dielectric material overlying the bottom oxide layer;
- and
- forming a top oxide layer overlying the layer comprising a high-K dielectric material.
Dependencies are inferred from the claim text.