Diaphragm-type semiconductor device and method for manufacturing diaphragm-type semiconductor device

A diaphragm-type semiconductor device comprising:

• a semiconductor substrate having a substantially flat surface;
• a diaphragm that covers a pressure reference space located on the substantially flat surface;
• and
• a step adjuster located around the pressure reference space on the substantially flat surface, wherein the step adjuster has substantially the same height, as measured from the substrate, as the pressure reference space, and wherein pressure is sensed on a basis of capacitance variation caused by deformation of the diaphragm.

A diaphragm-type semiconductor device comprising:

• a semiconductor substrate;
• a diaphragm provided above a surface of the semiconductor substrate for covering a pressure reference space defined on the semiconductor substrate;
• a bottom electrode layer provided in the semiconductor substrate and beneath the pressure reference space;
• and
• a top electrode layer provided in the diaphragm, wherein the top electrode layer is for forming a capacitor with the bottom electrode,
• wherein a projection of the pressure reference space is smaller than that of the top electrode layer and is located inside that of the top electrode layer.

A diaphragm-type semiconductor device comprising:

• a semiconductor substrate;
• a diaphragm provided above a surface of the semiconductor substrate for covering a pressure reference space defined on the semiconductor substrate;
• a bottom electrode layer provided in the semiconductor substrate and beneath the pressure reference space;
• and
• a top electrode layer provided in the diaphragm for forming a capacitor with the bottom electrode,
• wherein the top electrode layer completely extends outwardly beyond the pressure reference space.

A diaphragm-type semiconductor device comprising:

• a semiconductor substrate;
• a diaphragm provided above a surface of the semiconductor substrate for covering a pressure reference space defined on the semiconductor substrate;
• a bottom electrode layer provided in the semiconductor substrate and beneath the pressure reference space;
• a top electrode layer provided in the diaphragm for forming a capacitor with the bottom electrode, wherein the top electrode layer extends outwardly beyond the pressure reference space;
• and
• a step adjuster disposed above the surface of the semiconductor substrate, around the pressure reference space and below the top electrode layer.