Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies

A semiconductor device assembly comprising:

• at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
• an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
• at least one electrically conductive redistribution line formed over the active surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
• at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the back surface remote therefrom;
• and
• a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the substrate being superimposed over the at least one semiconductor die with the at least one electrical interconnect on the first surface electrically connected to the at least one electrically conductive redistribution line at the predetermined location on the back surface of the at least one semiconductor die.

A stacked semiconductor device assembly comprising:

• a first semiconductor die having an active surface and a back surface, the first semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
• a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
• at least one electrically conductive redistribution line on the active surface of the first semiconductor die in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
• at least one electrically conductive redistribution line on the back surface of the first semiconductor die in electrical communication with the electrically conductive material of the at least one via or another via and extending to a predetermined location on the back surface remote therefrom;
• a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface directly electrically connected to the first semiconductor die;
• and
• a second semiconductor die having an active surface and a back surface, the second semiconductor die electrically connected to the first semiconductor die by way of the at least one electrically conductive redistribution line on the active surface thereof or the at least one electrically conductive redistribution line on the back surface thereof;
• at least one via extending from the active surface to the back surface of the second semiconductor die;
• a conductive material disposed in the at least one via of the second semiconductor die and substantially extending a length thereof from the active surface to the back surface thereof;
• and
• at least one electrically conductive redistribution line on the back surface of the second semiconductor die in electrical communication with the conductive material of the at least one via and extending to a predetermined location remote therefrom.

An electronic system comprising:

• a processor device coupled to an input device and an output device;
• and
• a semiconductor device assembly coupled to at least one of the processor device, the input device and the output device, the semiconductor device assembly comprising:
• at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
• a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface of the at least one semiconductor die;
• at least one electrically conductive redistribution line on the active surface of the at least one semiconductor die in electrical communication with the electrically conductive material of the at least one via and extending to a predetermined location on the active surface remote therefrom;
• at least one electrically conductive redistribution line on the back surface of the at least one semiconductor die in electrical communication with the conductive material in the at least one via and extending to a predetermined location on the back surface remote therefrom;
• and
• a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface electrically connected to the at least one electrically conductive redistribution line at the predetermined location on the back surface of the at least one semiconductor die.

A semiconductor substrate comprising:

• at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
• an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
• at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material of the at least one via or another via and extending to a predetermined location on the back surface remote therefrom;
• at least one bond pad formed over the at least one via on the active surface;
• and
• a wire bond pad formed from the at least one bond pad.