Binary and ternary crystal purification and growth method and apparatus

Purification apparatus for crystal starter material, comprising a chamber having a bottom and side walls, a lid covering the chamber, an opening for introducing liquid or solid material into the chamber, an outlet near the bottom of the chamber for releasing purified crystal starter material from the chamber, a shut-off valve connected to the outlet for opening and closing the outlet, a source of inert, reactive gas or plasma connected to the chamber and extending into a bottom of the chamber, a gas release barrier near the bottom of the chamber for slowly releasing inert reactive gas or plasma into the crystal starter material, a gaseous space at the top of the chamber above the crystal starter material, an exhaust line connected to the space at the top of the chamber for withdrawing gas from the top of the chamber, and multizone heaters adjacent the chamber for heating the chamber and the crystal starter material within the chamber.

Heating and purifying apparatus, comprising a chamber having an inlet and an outlet, a source of material connected to the inlet and a purified material discharge connected to the outlet, an enclosure having side walls, a bottom and a top, a heater connected to the enclosure, a reactive gas source, a gas valve connected to the gas source and a gas inlet tube connected to the valve, a gas distributor mounted in the chamber near the bottom, a gas releasing plate connected to the gas distributor for releasing the reactive gas from the inlet tube and the distributor into the material in the feeding and purifying apparatus, multiple zone heaters connected to the chamber for heating material in the chamber, a gas exhaust connected to an upper portion of the chamber for exhausting gas from an upper portion of the chamber, and a plasma source connected to the chamber.

Crystal growth apparatus comprising a support for supporting a growing crystal, a first multiple zone heater adjacent the growing crystal for heating the growing crystal and liquefying the growing crystal, a second multiple zone heater spaced from the first multiple zone heater along the growing crystal for re-liquefying the growing crystal, and a plasma source connected to the chamber.

Crystal growth apparatus comprising a chamber for holding a crystal melt, a crystal support holding a crystal movable with respect to the chamber for forming a bottom of the chamber with the crystal, a first multiple zone heater adjacent the chamber for heating and maintaining a crystal melt within the chamber, a baffle connected to the first multiple zone heater adjacent a bottom of the chamber, a second multiple zone heater connected to the baffle beyond the first heater, a source of reactive and inert gas and plasma, a controller connected to the source of reactive and inert gas and plasma, a gas tube connected to the controller, a distributor connected to the gas tube and mounted in the chamber for positioning within the crystal melt, a gas releaser connected to the distributor for releasing reactive and inert gas and plasma into the crystal melt, and a gas exhaust connected to the chamber for exhausting gas from the chamber above the crystal melt.

The process for crystal growth, comprising holding a crystal melt in a chamber, holding a crystal in a crystal support, moving the support with respect to the chamber, forming a bottom of the chamber, heating and maintaining a crystal melt temperature within the chamber, separating heating of the chamber from a crystal by a baffle adjacent a bottom of the chamber, heating the crystal with a second heater, releasing reactive and inert gas and plasma into the crystal melt, and exhausting gas from the chamber above the crystal melt.

The process for heat treating crystals, comprising placing a formed and cut crystal on a platform, enclosing sides of the crystal, placing a lid on top of the crystal, applying inward force to the sides and the top to press the crystal inward, heating the crystal, increasing force on the crystal, maintaining force and heating the crystal for a predetermined time, reducing force and reducing heat, cooling the annealed crystal and withdrawing the cooled crystal, wherein the crystal is a single crystal, polycrystalline or powdered material.

Purification apparatus for crystal starter material, comprising a chamber having bottom and side walls, a lid covering the chamber, an opening for introducing liquid or solid material in the chamber, an outlet near or at the bottom of the chamber, a shut off valve connected to the outlet for opening and closing the outlet, a source of reactive gas connected to the chamber and extending into the chamber, a reactive gas release area extending to the near bottom of the chamber for slowly releasing reactive gas into and above the crystal starter material, gaseous space at the top of the chamber for withdrawing gas from the top of the purified material, and a heater adjacent the chamber for heating the chamber and the crystal starter material within the chamber.

Purification apparatus for crystal starter material, comprising a reduced pressure chamber having a vacuum port and vacuum valves, a gas delivery system, heating elements for heating the contents in the chamber, a container for material to be purified and a porous distributor to distribute reactive gas within and above the material being purified.