Field effect transistor

A field-effect transistor, comprising:

• a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire;
• and
• at least one nanotube, which form a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube,
• the nanowire and the nanotube being arranged at a distance from one another, at least one further electrically insulating nanotube as a gate insulator arranged concentrically between the nanowire and the nanotube in such a manner or being set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube.