Self triggered imaging device for imaging radiation
AssigneeSimage Oy
InventorsKonstantinos Evangelos Spartiotis, Stefan Jurthe, Jouni Pyythiä
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Abstract
A semiconductor radiation imaging assembly comprises a semiconductor imaging device including at least one image element detector. The imaging device is arranged to receive a bias for forming the at least one image element detector. The assembly also includes bias monitoring means for monitoring the bias for determining radiation incident on the image element detector. Preferably, the imaging device comprises a plurality of image element detectors the bias for at least some of which is monitored for determining incident radiation. More preferably, the bias for all the detector elements is monitored.
Claims52
A semiconductor radiation imaging assembly, comprising:
- a semiconductor imaging device including at least one high energy direct conversion image element detector;
- said semiconductor imaging device comprising a semiconductor substrate supporting a first and second conductive layer on respective first and second surfaces, said second conductive layer comprising an image element electrode and said first and second conductive layers at least partially opposing each other for applying a bias therebetween to define a radiation detection zone for said image element detector;
- and
- bias signal monitoring means for monitoring a bias signal applied to said first conductive layer for determining radiation incident on said image element detector.
A semiconductor radiation imaging assembly, comprising:
- a semiconductor imaging device including at least one high energy direct conversion image element detector;
- said semiconductor imaging device comprising a semiconductor substrate supporting a first and second conductive layer on respective first and second surfaces, said second conductive layer comprising an image element electrode and said first and second conductive layers at least partially opposing each other for applying a bias therebetween to define a radiation detection zone for said image element detector;
- and
- bias monitoring means for monitoring a bias signal applied to said conductive layer, said bias monitoring means being for use in controlling readout from said radiation detection zone so as to determine radiation incident on said image element detector.
Dependencies are inferred from the claim text.