Insulating micro-structure and method of manufacturing same

A method of manufacturing an insulting micro-structure, comprising the steps of:

• providing a silicon substrate;
• etching a plurality of trenches in said substrate;
• oxidizing said plurality of trenches until a majority of a volume of said trenches becomes filled with oxidized silicon;
• wherein said trenches are spaced apart sufficient to prevent said silicon substrate between said trenches from being completely oxidized during said step of oxidizing;
• depositing an insulator to fill what remains of said trenches after the step of oxidizing;
• and
• depositing a pattern of metal on a side of said micro-structure furthest away from said silicon substrate, thus forming said insulating micro-structure.

A method of manufacturing an insulating micro-structure, comprising the steps of:

• providing a silicon substrate;
• etching a plurality of trenches in said silicon substrate;
• oxidizing said plurality of trenches until the silicon between said trenches is fully oxidized;
• depositing an insulator to fill what remains of said trenches after the step of oxidizing;
• and
• releasing said micro-structure from said silicon substrate.

A method of manufacturing an insulting micro-structure, comprising the steps of:

• providing a silicon substrate;
• etching a plurality of trenches in said substrate;
• oxidizing said plurality of trenches until a majority of a volume of said trenches becomes filled with oxidized silicon;
• wherein said trenches are spaced apart sufficient to prevent said silicon substrate between said trenches from being completely oxidized during said step of oxidizing;
• depositing an insulator to fill what remains of said trenches after the step of oxidizing, thus forming said insulating micro-structure;
• and
• releasing said micro-structure from said silicon substrate.