Seed layer repair
AssigneeShipley Company, L.L.C.
InventorsDenis Morrissey, Jeffrey M. Calvert, Robert D. Mikkola
Life of this patent
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Abstract
Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.
Claims18
A method of providing a metal seed layer substantially free of discontinuities disposed on a substrate comprising the step of contacting a metal seed layer having discontinuities disposed on a substrate with an electroplating bath comprising a) a source of copper ions;
- b) an electrolyte comprising two or more acids;
- c) and optionally one or more additives;
- wherein the two acids are present in a ratio of 99:1 to 1:99 by weight;
- and electroplating copper on the metal seed layer, wherein the substrate comprises apertures having diameters of 0.18 μm or smaller, and wherein at least one acid is a (C3-C6)alkylsulfonic acid.
A method of manufacturing semiconductor device comprising the step of contacting a metal seed layer disposed on a substrate with an electroplating bath comprising a) a source of copper ions;
- b) an electrolyte comprising two or more acids;
- c) and optionally one or more additives, wherein the two acids are present in a ratio of 99:1 to 1:99 by weight;
- and electroplating copper on the seed layer, wherein the substrate comprises apertures having diameters of 0.18 μm or smaller, and wherein at least one acid is a (C3−C6) alkylsulfonic acid.
Dependencies are inferred from the claim text.