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US 6,794,265 B2Granted
Methods of forming quantum dots of Group IV semiconductor materials
AssigneeUltraDots, Inc.
InventorsHoward Wing Hoon Lee, Bingshen Gao, Majid Keshavarz
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Abstract
The invention relates to a method of forming a quantum dot. A particle that includes a semiconductor material Y selected from the group consisting of Si and Ge is provided. Sound energy and light energy is applied to the particle to form a quantum dot. The quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent. The quantum dot includes a core, and the core includes Y.
Claims25
A method of forming a quantum dot, comprising:
- providing a particle that includes a semiconductor material Y selected from the group consisting of Si and Ge;
- and
- applying sound energy and light energy to said particle to form a quantum dot that exhibits photoluminescence with a quantum efficiency that is greater than 10 percent, said quantum dot including a core, said core including Y.
A method of forming quantum dots, comprising:
- providing particles having a first peak size, said particles including a semiconductor material Y selected from the group consisting of Si and Ge;
- and
- applying light energy to said particles for a time sufficient to form quantum dots having a second peak size, said second peak size being smaller than said first peak size.
A method of forming a quantum dot, comprising:
- reacting, in a reaction medium, a source of a semiconductor material Y selected from the group consisting of Si and Ge with a reducing agent to form a particle that includes a core, said core including Y, said reducing agent being selected from the group consisting of Group IIA metals, transition metals, and lanthanides;
- and
- reacting said particle with a source of surface ligands to form a ligand layer surrounding said core to form a quantum dot, said ligand layer including at least one surface ligand.
Dependencies are inferred from the claim text.