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US 6,790,747 B2Granted
Method and device for controlled cleaving process
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
Life of this patent
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims24
A process for forming substrates, said process comprising:
- providing a substrate having a stressed region along a first plane associated with the substrate and an implanted region along a second plane associated with a depth within the substrate, the substrate having a surface region;
- bonding the surface region of the substrate to a handle substrate;
- using a controlled cleaving action to initiate a cleave along the depth of the substrate;
- and
- propagating a cleave front to free a portion of said substrate.
2 more elements
Dependencies are inferred from the claim text.