Method for making an inlayed thyristor-based device

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• and
• forming a control port capacitively coupled to one or more of the adjacent regions;
• wherein forming the control port comprises implanting a portion of the substrate adjacent the provided trench.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• and
• forming a control port capacitively coupled to one or more of the adjacent regions;
• wherein forming the control port includes forming the control port below a plane defining an upper end of the trench.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• and
• forming a control port capacitively coupled to one or more of the adjacent regions;
• wherein forming the control port includes using a portion of the substrate as at least a part of the control port.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• forming a control port capacitively coupled to one or more of the adjacent regions;
• and
• forming an insulating material in the trench, prior to forming the thyristor.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• forming a control port capacitively coupled to one or more of the adjacent regions;
• and
• forming a dielectric material prior to forming a semiconductor material in the trench, wherein forming a control port includes forming the control port adjacent to the dielectric material, the control port being configured and arranged to capacitively couple to the thyristor via the dielectric material.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• forming a control port capacitively coupled to one or more of the adjacent regions;
• and
• etching an isolation trench in the substrate and filling the trench with an insulator material.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• forming a control port capacitively coupled to one or more of the adjacent regions;
• and
• recessing sidewalls of the trench and forming a gate dielectric material in the recessed sidewall.

A method for making a semiconductor device, the method comprising:

• providing a trench in a substrate;
• forming a semiconductor material in the trench;
• forming a thyristor having adjacent regions of different polarity, at least one of the regions including a portion of the formed semiconductor material in the trench and at least one other of the regions including a portion of the substrate that is adjacent the trench;
• and
• forming a control port capacitively coupled to one or more of the adjacent regions;
• wherein forming the thyristor includes doping the portion of the substrate contiguously adjacent the trench and driving the dopant into the substrate.