Methods and apparatus for characterizing thin films
AssigneeKLA-Tencor Technologies Corporation
InventorsGary Janik, Roger Kroeze, Murali Narsimhan
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Abstract
Methods and apparatus are providing for characterizing thin films in an integrated circuit device. A target including multiple layers is scanned using an x-ray emission inducer. X-ray emissions characteristic of materials in the target are measured. In one example, multiple beam energies are used to conduct the scan. In another example, continuously varying beam energies are used. Information such as K-ratios or the intensity of the x-ray emissions is provided to determine the thickness and/or composition of layers in the scan target.
Claims49
A method for characterizing thin films, the method comprising:
- scanning a first scan target in an integrated circuit device by using a particle beam generator configured to emit particles at a first energy, wherein the particles interact with a first layer comprising a first material and a second layer comprising a second material in the scan target, wherein the second layer lies beneath a first layer;
- detecting x-ray emissions associated with scanning at the first energy;
- scanning the first scan target by using the particle beam generator configured to emit particles at a second energy, the particles interacting with the first layer comprising the first material and the second layer comprising the second material in the scan target;
- detecting x-ray emissions associated with scanning at the second energy;
- and
- characterizing the second layer by using x-ray emissions from the first and second materials resulting from scans at the first and second energies.
An apparatus for measuring thin films, the apparatus comprising:
- an x-ray emission inducer operable to scan a first scan target in an integrated circuit device at a first energy and a second energy, wherein the x-ray emission inducer causes x-ray emissions from a first layer comprising a first material and a second layer comprising a second material in the scan target;
- and
- an x-ray emission detector operable to measure characteristic x-ray emissions resulting from the scan at the first energy and the second energy, wherein x-ray emissions characteristic of the first and second materials scanned at the first energy and the second energy are measured to characterize the second layer.
A method for measuring thin films, the method comprising:
- scanning a first scan target in an integrated circuit device by using an x-ray emission inducer configured to scan at energies continuously varying between a first and a second energy, the scan target including a first layer comprising a first material and a second layer comprising a second material;
- detecting x-ray emissions associated with scanning at energies continuously varying between the first and second energies, wherein x-ray emissions detected include emissions characteristic of the first and second materials used to determine the thickness and composition of the second layer.
Dependencies are inferred from the claim text.