Method and apparatus for refreshing memory cells
AssigneeInfineon Technologies AG
InventorsHeiko Fibranz, Helmut Fischer
Life of this patent
Estimating the term…
Abstract
In a memory element with a first number of memory cells having a first retention time for holding a content of the memory cells and a second number of memory cells having a second retention time for holding the content of the memory cell, a method for refreshing the memory cells comprises a step of refreshing the first number of memory cells when reaching the first retention time and a step of refreshing the second number of memory cells when reaching the second retention time. An apparatus for refreshing the memory cells of the memory element is provided for refreshing the first number of memory cells when reaching the first retention time, and for refreshing the second number of memory cells when reaching the second retention time.
Claims6
A method for refreshing a plurality of memory cells in a memory element, wherein a first plurality of memory cells has a first retention time for holding a content of the memory cell, and wherein a second number of memory cells has a second retention time for holding the content of the memory cell, wherein the first retention time is shorter than the second retention time, wherein the memory element has a plurality of activation lines, and wherein each activation line has associated therewith a plurality of memory cells, the method comprising the steps of:
- receiving a clock signal having a clock cycle being equal to the first retention time divided by the plurality of activation lines;
- receiving an enable signal having a clock cycle corresponding to the second retention time, the enable signal indicating whether all activation lines are to be refreshed;
- receiving an address signal for selecting one the activation lines;
- depending on the received address signal, determining if at least one memory cell of the first plurality of memory cells is associated with the selected activation line;
- when at least one memory cell of the first plurality of memory cells is associated with the selected activation line, independent of the enable signal, applying the clock signal and the address of the selected activation line to a refresh circuit for generating a refresh signal for the plurality of memory cells associated with the selected activation line;
- when no memory cell of the first plurality of memory cells is associated with the selected activation line and the enable signal indicates that all activation lines are to be refreshed, applying the clock signal and the address of the selected activation line to the refresh circuit for generating a refresh signal for the plurality of memory cells associated with the selected activation line;
- and
- when no memory cell of the first plurality of memory cells is associated with the selected activation line and the enable signal indicates that not all activation lines are to be refreshed, suppressing the clock signal so that the refresh circuit generates no refresh signal for the selected activation line.
An apparatus for refreshing a plurality of memory cells in a memory element, wherein a first number of memory cells has a first retention time for holding a content of each of the first number of memory cells, and wherein a second number of memory cells has a second retention time for holding a content of each of the second number of memory cells, and wherein the first retention time is shorter than the second retention time, the apparatus comprising:
- a plurality of activation lines and a plurality of memory cells being associated with each said activation line;
- a clock input for receiving a clock signal with a clock cycle being equal to the first retention time divided by the number of said activation lines;
- an enable input for receiving an enable signal having a clock cycle corresponding to the second retention time, the enable signal indicating if all of said activation lines are to be refreshed;
- an address input for receiving an address signal for selecting one of said activation lines;
- first logic means for determining if at least one memory cell of said first plurality of memory cells is associated with said selected activation line;
- a refresh circuit having an address input for receiving the address signal, a clock signal input for receiving the clock signal and a plurality of activation outputs each being connected to one of said activation lines, for generating a refresh signal for said plurality of memory cells associated with said activation line selected by the address signal depending on a clock signal applied to the clock signal input;
- and
- second logic means for applying the clock signal to the clock signal input of said refresh circuit independently of an enable signal, when at least one memory cell of said first plurality of memory cells is associated with said selected activation line, for applying the clock signal to the clock signal input of said refresh circuit, when no memory cell of said first plurality of memory cells is associated with said selected activation line and the enable signal indicates that all of said activation lines are to be refreshed, and for suppressing the clock signal when no memory cell of said first plurality of memory cells is associated with said selected activation line and the enable signal indicates that all of said activation lines are to be refreshed.
Dependencies are inferred from the claim text.