Embedded recall apparatus and method in nonvolatile memory
AssigneeSilicon Storage Technology, Inc.
InventorsHung Q. Nguyen, Sang Thanh Nguyen, Loc B. Hoang, Tam M. Nguyen
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AssigneeSilicon Storage Technology, Inc.
InventorsHung Q. Nguyen, Sang Thanh Nguyen, Loc B. Hoang, Tam M. Nguyen
Estimating the term…
Predetermined data is stored in first and second predetermined locations of a memory. The first location may be in a first part of the memory, and the second location may be in a redundant part of the memory. At power up or reset, the first predetermined location of the memory successively is read and compared to data stored in a register until the comparison indicates a match for a predefined number of consecutive reads and comparisons. The successive reading may be stopped if the number of comparisons indicating a failure equals another predefined number of times. The data stored in the second predetermined location also is read. This data may be compared to the data previously read from the second predetermined location. The reading and comparing from the first predetermined location and the reading from the second predetermined location are continued until the number of times data is read from the second predetermined location equals a third predetermined number. The voltage signal is then determined to be valid after sufficient successive reads of the first predetermined location of the memory.
A method for verifying data stored in a memory, the method comprising:
A method for verifying data stored in a memory, the method comprising:
A memory device comprising:
A memory device comprising:
A memory device comprising:
A method for verifying data stored in a memory, the method comprising:
Dependencies are inferred from the claim text.