Ferroelectric storage apparatus, driving method therefor, and driving circuit therefor

A ferroelectric storage apparatus, comprising:

• a plurality of word lines disposed in parallel to each other;
• a plurality of bit lines disposed in parallel to each other and intersecting with the plurality of word lines;
• a plurality of ferroelectric memory cells formed at intersections of the plurality of word lines and the plurality of bit lines;
• a word-line driver to drive the plurality of word lines;
• and
• a bit-line driver to drive the plurality of bit lines,
• the word-line driver and the bit-line driver applying an operation mode of one of data reading, data re-writing, and data writing to at least one selected cell among the plurality of ferroelectric memory cells, and applying a voltage to each of the plurality of ferroelectric memory cells in an electric-field direction in which the stored data of each ferroelectric memory cell is not inverted, during a disturbance prevention mode performed after the operation mode is performed at least once.

A driving circuit connected to a ferroelectric storage section provided with a plurality of ferroelectric memory cells formed at the intersections of a plurality of word lines and a plurality of bit lines, the driving circuit comprising:

• a word-line driver to drive the plurality of word lines;
• and
• a plurality of bit-line drivers to drive the plurality of bit lines,
• the word-line driver and the bit-line drivers applying an operation mode of one of data reading, data re-writing, and data writing to at least one selected cell among the plurality of ferroelectric memory cells, formed at the intersections of the plurality of word lines and the plurality of bit lines, and applying a voltage to each of the plurality of ferroelectric memory cells in an electric-field direction in which the stored data of each ferroelectric memory cell is not inverted, during a disturbance prevention mode performed after the operation mode is performed at least once.