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US 6,788,499 B2Granted
Spin valve sensor with insulating and conductive seed layers
AssigneeInternational Business Machines Corporation
InventorsTsann Lin, Daniele Mauri
Life of this patent
Estimating the term…
Abstract
A spin valve sensor with insulating and conductive seed layers is provided. The sensor comprising Al2O3/Ni—Cr—Fe/Ni—Fe/Co—Fe/Cu/Co—Fe/Ru/Co—Fe/Pt—Mn films is formed by depositing an insulating Al2O3 seed layer in a first chamber by reactively pulsed DC magnetron sputtering, depositing a conducting Ni—Cr—Fe seed layer and a ferromagnetic Ni—Fe free layer in a second chamber by ion beam sputtering, and then forming the remainder of the spin valve sensor in a third chamber by DC magnetron sputtering.
Claims3
A spin valve sensor, comprising:
- a) an Al2O3 seed layer;
- b) a Ni—Cr—Fe/Ni—Fe/CO—Fe multilayer structure over said Al2O3 layer;
- c) a Cu spacer layer over said multilayer structure;
- d) a Co—Fe/Ru/Co—Fe pinned layer over said Cu spacer layer;
- and
- e) a Pt—Mn antiferromagnetic layer over said pinned layer.
3 more elements
A spin valve sensor, comprising:
- an Al2O3 substrate;
- an Al2O3 seed layer over said substrate;
- a Ni—Cr—Fe/Ni—Fe/Co—Fe multilayer structure over said Al2O3 layer;
- a Cu spacer layer over said multilayer structure;
- a Co—Fe/Ru/Co—Fe pinned layer over said Cu spacer layer;
- and
- a Pt—Mn antiferromagnetic layer over said pinned layer.
4 more elements
Dependencies are inferred from the claim text.