Method for producing inorganic semiconductor nanocrystalline rods and their use
AssigneeYissum Research Development Company of the Hebrew Univeristy of Jerusalem
InventorsUri Banin, Shi Hai Kan
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AssigneeYissum Research Development Company of the Hebrew Univeristy of Jerusalem
InventorsUri Banin, Shi Hai Kan
Estimating the term…
The present invention provides a new method for the production of inorganic semiconductor nanocrystals having a rod-like shape. More specifically the present invention provides a method of synthesizing rod shaped Group III-V semiconductor nanocrystals. The method comprises: reacting, in a high-boiling point organic solvent, a two-source precursor solution comprising at least one metal source and at least one nonmetal source, or a single-source precursor solution, with a metal catalyst or an agent capable of producing said metal catalyst, said high-boiling point organic solvent having a temperature above 200° C., thereby forming a reaction product comprising semiconductor nanocrystals of various shape; cooling the reaction product, and subsequently exposing said cooled reaction product to at least one centrifugal step so as to obtain semiconductor nanocrystals having substantially rod-like shape. The rod-shaped nanocrystals obtained by the method of the invention usually have organic ligands as a coating on their outer surfaces. Such organic ligands affect the solubility of the particles and may be substituted or removed, according to the application intended for said particles after the reaction is completed.
A method for the production of inorganic semiconductor nanocrystals having a rod-like shape, the method comprising:
A method for the formation of Group III-V semiconductor nanocrystals having rod-like shape, comprising
A method for the formation of InAs semiconductor nanocrystals having rod-like shape, comprising introducing a precursor solution of an In source and an As source into a hot mixture comprising NaBH4 and a high boiling point organic solvent, said hot mixture having a temperature above 200° C., thereby forming a reaction product comprising InAs nanocrystals of various shape, and exposing said reaction product to at least one centrifugal step so as to obtain InAs semiconductor nanocrystals having a rod-like shape.
Dependencies are inferred from the claim text.