Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroyuki Miyake, Yutaka Shionoiri
Life of this patent
Estimating the term…
Abstract
A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
Claims48
A semiconductor device comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- and a capacitor between the output terminal of the fifth transistor and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the fifth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor;
- and a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the fifth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and the output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
- and a capacitor between the gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the sixth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
- a first capacitor between the gate electrode and an output terminal of the first transistor;
- and a second capacitor between a gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to the gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the sixth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- and a capacitor between the output terminal of the fifth transistor and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the fifth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a first capacitor between a gate electrode of the first transistor and an output terminal of the first transistor;
- and a second capacitor between a gate electrode of the third transistor and an output terminal of the third transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor and a gate electrode of the fourth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the fifth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and the output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
- and a capacitor between the gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to a gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the sixth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
A semiconductor device comprising a pixel portion and a driver circuit, the driver circuit comprising:
- first and second transistors each comprising an input terminal electrically connected to a first electric power source;
- third and fourth transistors each comprising an input terminal electrically connected to a second electric power source;
- a voltage compensator circuit comprising:
- a fifth transistor comprising an input terminal electrically connected to the first electric power source and an output terminal electrically connected to a gate electrode of the first transistor and a gate electrode of the second transistor;
- a sixth transistor comprising an input terminal electrically connected to the second electric power source and an output terminal electrically connected to the gate electrode of the first transistor and the gate electrode of the second transistor;
- a first capacitor between the gate electrode and an output terminal of the first transistor;
- and a second capacitor between a gate electrode and an output terminal of the first transistor;
- a first signal input portion for inputting a first signal to the gate electrode of the third transistor, a gate electrode of the fourth transistor, and a gate electrode of the sixth transistor;
- a second signal input portion for inputting a second signal to an input terminal of the fifth transistor;
- and
- a signal output portion,
- wherein each of the first through the sixth transistors have the same conductivity type,
- wherein the output terminal of the first transistor and an output terminal of the third transistor are electrically connected,
- wherein an output terminal of the second transistor and an output terminal of the fourth transistor are electrically connected to the signal output portion,
- wherein a gate electrode of the fifth transistor is electrically connected to the first electric power source or to a third electric power source, and
- wherein the voltage compensator circuit compensates for amplitude attenuation of a signal output from the signal output portion.
Dependencies are inferred from the claim text.