Apparatus for determining doping concentration of a semiconductor wafer
AssigneeSolid State Measurements, Inc.
InventorWilliam H. Howland
Life of this patent
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Abstract
An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included and surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard also insulates the conductive tip from the semiconductor wafer.
Claims8
An apparatus for determining doping concentration of a semiconductor wafer comprising:
- a probe having an electrically conductive tip and an electrical insulator covering at least a distal end of the conductive tip;
- means for applying a capacitance-voltage (CV) type electrical stimulus between the electrically conductive tip and a semiconductor wafer when the electrical insulator is in contact with the semiconductor wafer;
- means for measuring a CV response of the semiconductor wafer to the CV type electrical stimulus;
- and
- means for determining from the CV response a doping concentration of the semiconductor wafer.
Dependencies are inferred from the claim text.