Tungsten-based interconnect that utilizes thin titanium nitride layer

Abstract

An interconnect for a substructure having an opening (470) with a rounded perimetrical top edge (480) includes a titanium nitride layer (150) and a tungsten layer (160). The titanium layer overlies the substructure, extends into the opening, has a substantially columnar grain structure, and is less than 30 nm thick. The tungsten layer overlies/contacts the titanium nitride layer and extends into the opening. A titanium layer (140) normally no more than 36 nm thick is typically situated between the substructure and the titanium nitride layer.

Dependencies are inferred from the claim text.