Barrier material for copper structures
AssigneeInternational Business Machines Corporation
InventorsMichael Lane, Fenton Read McFeely, Conal Murray, Robert Rosenberg
Life of this patent
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Abstract
A barrier material that is particularly suited as a barrier layer in copper interconnects structures found in semiconductor structures. The barrier layer contains one or more regions with one region containing at least 50 atom percent of a copper interface metal. The copper interface metal is selected from ruthenium, rhodium, palladium, silver, gold, platinum, iridium, selenium, tellurium, or alloys thereof. The barrier layer also contains a dielectric interface material.
Claims22
A semiconductor structure comprising:
- a dielectric layer disposed on in underlayer;
- and
- a barrier layer disposed on the dielectric layer, wherein the barrier layer comprises a dielectric interface material, and a region of the barrier layer proximate to a conducting layer comprises at least 50 atom percent of a copper interface metal, the conducting layer comprising copper or an alloy and containing less than 40% copper grain;
- by volume with a (111) crystallographic orientation as a result of direct electrodeposition of the conducting layer onto the barrier layer.
A semiconductor structure comprising:
- a dielectric layer disposed on an underlayer;
- a barrier layer disposed on the dielectric layer, wherein the barrier layer contains a dielectric interface material and a copper interface metal, and a region of the barrier layer proximate to the dielectric layer comprises at least 50 atom percent of the dielectric interface material;
- and
- a conducting layer containing copper or an alloy thereof, wherein a region of the barrier layer proximate to the conducting layer comprises at least 50 atom percent of the copper interface metal, the conducting layer is electrodeposited without a copper seed layer and contains less than 40% copper grains by volume with a (111) crystallographic orientation as a result of the direct electrodeposition the conducting layer onto the barrier layer.
A barrier layer comprising a gradient atomic concentration of a copper interface metal and a dielectric interface material with a surface of the barrier layer proximate to a conducting layer containing at least 50 atom percent of ruthenium and an opposite surface of the barrier layer proximate to a dielectric containing at least 50 atom percent of tungsten, wherein the conducting layer contains less than 40% copper grams by volume with a (111) crystallographic orientation as a result of direct electrodeposition of the conducting layer onto the barrier layer.
Dependencies are inferred from the claim text.