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US 6,787,910 B2Granted
Schottky structure in GaAs semiconductor device
AssigneeNational Chiao Tung University
InventorsCheng-Shih Lee, Yi Chang
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Abstract
The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
Claims7
A Schottky Structure in GaAs semiconductor device which comprises:
- a gallium arsenide (GaAs) semiconductor substrate;
- a titanium (Ti) layer located on a surface of said gallium arsenide (GaAs) semiconductor substrate to form a Schottky contact;
- a diffusion barrier layer located on a surface of said titanium (Ti) layer to block copper metal diffusion, the diffusion barrier layer includes at least one refractory material selected from the group consisting of cobalt (Co) and molybdenum (Mo);
- and
- a first copper layer located on a surface of said diffusion layer, whereby said diffusion barrier layer blocks copper metal diffusion during surface treatment of said first copper layer.
2 more elements
Dependencies are inferred from the claim text.