High frequency semiconductor device

A high-frequency semiconductor device comprising:

• a ground plate extending over a semiconductor substrate throughout with an insulation film intervening therebetween;
• a plurality of line conductors provided on said ground plate, forming a multiple layer structure with the intervention of interlayer insulation films, each of said interlayer insulation films being composed of a resin insulating material, and each of said line conductors forming a micro-strip line in conjunction with said ground plate, wherein said plurality of line conductors include one line conductor provided on the upper surface on the most upper one of said interlayer insulation films;
• a pad provided on said upper surface of said most upper one of said interlayer insulation films;
• and
• a groove provided in said most upper one of said interlayer insulation films, between said pad and said one line conductor on said upper surface of said most upper one of said interlayer insulation films, adjacent to and surrounding said pad,
• wherein said groove is divided into a plurality of portions with at least one gap provided across said groove.

A high-frequency semiconductor device comprising:

• a ground plate extending over a semiconductor substrate throughout with an insulation film intervening therebetween;
• a plurality of line conductors provided on said ground plate, forming a multiple layer structure with the intervention of interlayer insulation films, each of said interlayer insulation films being composed of a resin insulating material, and each of said line conductors forming a micro-strip line in conjunction with said ground plate, wherein said plurality of line conductors include one line conductor provided on the upper surface of the most upper one of said interlayer insulation films;
• a plurality of pads arranged in series on said upper surface of said most upper one of said interlayer insulation films, adjacent to and along the periphery of said semiconductor substrate;
• and
• a groove having a ring shape, said groove being provided in said most upper one of said interlayer insulation films, inside the serial arrangement of said plurality of pads, between said pads and said one line conductor on said upper surface of said most upper one of said interlayer insulation films, and adjacent to said pads.

A high-frequency semiconductor device having micro-strip lines, comprising:

• a ground plate extending over a semiconductor substrate with an insulation film intervening therebetween;
• a plurality of line conductors provided on said ground plate, forming a multiple layer structure with the intervention of interlayer insulation films including one provided between said ground plate and the lowest one of said line conductors, each of said interlayer insulation films being composed of a resin insulating material, said plurality of line conductors including one formed on the upper surface of the most upper one of said interlayer insulation films;
• a plurality of pads arranged in series on said upper surface of said most upper one of said interlayer insulation films, adjacent to and along the periphery of said semiconductor substrate;
• and
• a groove for preventing deformation caused in said most upper one of said interlayer insulation films by a force applied to said pad during a wire bonding process to propagate from the region under said pad to a region of said upper surface of said most upper one of said interlayer insulation films, on which one of said line conductors is formed, said groove being provided in said most upper one of said interlayer insulation films, and between each of said pads and one said line conductor on said upper surface of said most upper one of said interlayer insulation films.