High permeability composite films to reduce noise in high speed interconnects

A memory device, comprising:

• a memory array;
• a layer of insulating material disposed above a substrate;
• a number of transmission lines in the layer of insulating material, each transmission line having at least one surface layer having a magnetic material containing a ferrite encasing the transmission line on at least three sides;
• a number of conductive metal lines in the layer of insulating material, the number of conductive metal lines interposed among and parallel with the number of transmission lines;
• a conductive plane on the layer of insulating material, wherein the conductive plane includes two layers, a conductive layer and a plane of magnetic material;
• and
• a number of sense amplifiers coupled to the memory array through the number of transmission lines.

A memory device, comprising:

• a memory array;
• a first layer of insulating material disposed above a substrate;
• a number of transmission lines on the first layer of insulating material, each transmission line having at least one surface layer having a magnetic material containing a ferrite encasing the transmission line on at least three sides;
• a number of conductive metal lines on the first layer of insulating material, each conductive metal line having at least one surface layer having a magnetic material containing a ferrite encasing the conductive metal line on at least three sides, wherein the number of conductive metal lines are interposed among and parallel with the number of transmission lines;
• a second layer of insulating material on the number of transmission lines and the number of conductive metal lines;
• a conductive plane on the second layer of insulating material, wherein the conductive plane includes two layers, a conductive layer and a plane of magnetic material;
• and
• a number of sense amplifiers coupled to the memory array through the number of transmission lines.

A memory device, comprising:

• a memory array;
• a layer of insulating material disposed above a substrate;
• a number of transmission lines in the layer of insulating material, each transmission line having at least one surface layer having a magnetic material containing a ferrite encasing the transmission line on two sides;
• a number of magnetic metal lines in the layer of insulating material, the number of magnetic metal lines interposed among and parallel with the number of transmission lines;
• and
• a number of sense amplifiers coupled to the memory array through the number of transmission lines.

A memory device, comprising:

• a memory array;
• an insulating layer disposed above a substrate;
• a transmission line in the insulating layer, the transmission line coupled to the memory array;
• and
• a pair of conductive lines in the insulating layer, the transmission line interposed between and parallel with the pair of conductive lines, wherein at least one of the transmission line and the pair of conductive lines has a magnetic material containing a ferrite.