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US 6,787,887 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.
Claims25
A semiconductor device comprising:
- a substrate;
- a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising:
- a semiconductor island formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region interposed therebetween;
- a gate electrode formed adjacent to said channel region with a gate insulating film interposed therebetween;
- a first insulating film formed over said thin film transistor;
- a second insulating film formed over said first insulating film;
- an organic resin film formed on said second insulating film;
- and
- a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride.
8 more elements
A semiconductor device comprising:
- a substrate;
- an underlying film comprising silicon oxynitride formed over said substrate;
- a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising:
- a semiconductor island formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region interposed therebetween;
- a gate electrode formed adjacent to said channel region with a gate insulating film interposed therebetween;
- a first insulating film formed over said thin film transistor;
- a second insulating film formed over said first insulating film;
- an organic resin film formed on said second insulating film;
- and
- a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride.
9 more elements
A semiconductor device comprising:
- at least first and second semiconductor islands formed over a substrate, said first semiconductor island having at least one pair of n-type impurity regions therein and said second semiconductor island having at least one pair of p-type impurity regions therein;
- first and second gate electrodes formed adjacent to said first and second semiconductor islands, respectively with a gate insulating film interposed therebetween;
- a first insulating film formed over said first and second gate electrodes;
- a second insulating film formed over said first insulating film;
- an organic resin film formed on said second insulating film;
- and
- first and second electrodes formed over said organic resin film and electrically connected to said first and second semiconductor islands, respectively,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride.
6 more elements
A semiconductor device comprising:
- a substrate;
- a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising:
- a semiconductor island formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region interposed therebetween;
- a gate electrode formed adjacent to said channel region with a gate insulating film interposed therebetween;
- a first insulating film formed over said thin film transistor;
- a second insulating film formed over said first insulating film;
- a third insulating film formed on said second insulating film;
- and
- a pixel electrode formed over said third insulating film and electrically connected to one of said impurity regions,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride,
- wherein said third insulating film has a flattened surface.
9 more elements
A semiconductor device comprising:
- a substrate;
- an underlying film comprising silicon oxynitride formed over said substrate;
- a switching element including at least one thin film transistor formed over said underlying film, said thin film transistor comprising:
- a semiconductor island formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region interposed therebetween;
- a gate electrode formed adjacent to said channel region with a gate insulating film interposed therebetween;
- a first insulating film formed over said thin film transistor;
- a second insulating film formed over said first insulating film;
- a third insulating film formed on said second insulating film;
- and
- a pixel electrode formed over said third insulating film and electrically connected to one of said impurity regions,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride,
- wherein said third insulating film has a flattened surface.
10 more elements
A semiconductor device comprising:
- at least first and second semiconductor islands formed over a substrate, said first semiconductor island having at least one pair of n-type impurity regions therein and said second semiconductor island having at least one pair of p-type impurity regions therein;
- first and second gate electrodes formed adjacent to said first and second semiconductor islands, respectively with a gate insulating film interposed therebetween;
- a first insulating film formed over said first and second gate electrodes;
- a second insulating film formed over said first insulating film;
- a third insulating film formed on said second insulating film;
- and
- first and second electrodes formed over said third insulating film and electrically connected to said first and second semiconductor islands, respectively,
- wherein said first insulating film comprises a material selected from the group consisting of silicon nitride and silicon oxynitride,
- wherein said second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride,
- wherein said third insulating film has a flattened surface.
7 more elements
Dependencies are inferred from the claim text.