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US 6,787,883 B1Granted
Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth
AssigneeMicron Technology, Inc.
InventorLeonard Forbes
Life of this patent
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Abstract
A PMOS transistor is formed in a CMOS integrated circuit, having a Si1−xGex/Si heterojunction between the channel region and the substrate. The method is applicable to large volume CMOS IC fabrication. Germanium is implanted into a silicon substrate, through a gate oxide layer. The substrate is then annealed in a low temperature furnace, to form Si1−xGex in the channel region.
Claims15
A p-channel metal-oxide-semiconductor transistor, comprising:
- a silicon substrate;
- a silicon dioxide (SiO2) gate oxide, coupled to the substrate;
- a gate, coupled to the SiO2 gate oxide;
- source/drain regions formed in the substrate on opposite sides of the gate;
- a Si1−xGex channel region, having a germanium molar fraction x, located underneath the SiO2 gate oxide and between the source/drain regions, wherein x is less than or equal to 0.6, and wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface;
- and
- wherein the Si1−xGex channel region is formed from ion implanting Germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
4 more elements
A p-channel metal-oxide-semiconductor transistor formed on a silicon substrate, comprising:
- a Si1−xGex channel region, having a germanium molar fraction of x, and formed in the substrate, underneath a silicon dioxide (SiO2) gate oxide and between a source region and a drain region;
- wherein x is less than or equal to 0.6, and wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface;
- and
- wherein the Si1−xGex channel region is formed from ion implanting germanium (Ge) into the substrate at a dose greater than or equal to 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
1 more element
A p-channel metal-oxide-semiconductor transistor formed on a silicon substrate, comprising:
- a Si1−xGex channel region, having a germanium molar fraction of x, and formed in the substrate, underneath a silicon dioxide (SiO2) gate oxide and between a source region and a drain region, wherein x is less than or equal to 0.6, and wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface as a result of ion implantation of germanium through the previously formed SiO2 gate oxide;
- and
- wherein the Si1−xGex channel region is formed from ion implanting germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
A p-channel metal-oxide-semiconductor transistor formed on a silicon substrate, comprising:
- a Si1−xGex channel region, having a germanium molar fraction of 0.2, and formed in the substrate, underneath a silicon dioxide (SiO2) gate oxide and between a source region and a drain region, wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface;
- and
- wherein the Si1−xGex channel region is formed from ion implanting Germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
A semiconductor transistor, comprising:
- a silicon substrate;
- a silicon dioxide (SiO2) gate oxide, coupled to the substrate;
- a gate, coupled to the SiO2 gate oxide;
- source/drain regions formed in the substrate on opposite sides of the gate;
- a Si1−xGex channel region, having a germanium molar fraction of x, and located underneath the SiO2 gate oxide and between the source/drain regions, wherein x is less than or equal to 0.6, and wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface;
- and
- wherein the Si1−xGex channel region is formed from ion implanting germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
4 more elements
A semiconductor transistor formed on a silicon substrate, comprising:
- a Si1−xGex channel region, having a germanium molar fraction of 0.2 formed in the substrate, underneath a silicon dioxide (SiO2) gate oxide and between a source region and a drain region, wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface, wherein the Si1−xGex channel region is formed from ion implanting germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
A semiconductor transistor formed on a silicon substrate, comprising:
- a Si1−xGex channel region, having a germanium molar fraction of x, and formed in the substrate, underneath a silicon dioxide (SiO2) gate oxide and between a source region and a drain region, wherein x is less than or equal to 0.6, and wherein the Si1−xGex channel region forms a continuous Si1−xGex/SiO2 gate oxide interface wherein no germanium oxide is present at the Si1−xGex/SiO2 gate oxide interface as a result of ion implantation of germanium through the previously formed SiO2 gate oxide;
- and
- wherein the Si1−xGex channel region is formed from ion implanting germanium (Ge) into the substrate at a dose of approximately 2×1016 atoms/cm2, and wherein the Ge is implanted at an energy of approximately 20 to 100 keV.
Dependencies are inferred from the claim text.