Method for filling structural gaps and integrated circuitry

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of wordline constructions on selected portions of the substrate, the wordline constructions comprising insulative sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• and
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over the substrate within the gap that does not completely fill the gap and having a second thickness over an elevationally highest portion of the wordline constructions, the second thickness being less than the first thickness.

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of wordline constructions on selected portions of the substrate, the wordline constructions comprising insulative sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• and
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over the substrate within the gap that does not completely fill the gap and having a second thickness less than the first thickness over caps flanked by spacers of the wordline constructions.

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of wordline constructions on selected portions of the substrate, the wordline constructions comprising silicon nitride sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over an outward surface of the semiconductive substrate within the gap and having a second thickness over an outward surface of the wordline constructions, the second thickness being less than the first thickness, and the substrate outward surface and the wordline construction outward surface laying in parallel planes;
• and
• d) a layer of boron containing silicon oxide comprising material over the substantially boron free silicon oxide comprising material.

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of wordline constructions on selected portions of the substrate, the wordline constructions comprising silicon nitride sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• and
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over an outward surface of the semiconductive substrate within the gap that is less than a height of the gap and having a second thickness over an outward surface of the wordline constructions, the second thickness being less than the first thickness, and the substrate outward surface and the wordline construction outward surface laying in parallel planes.

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of word line constructions on selected portions of the substrate, the wordline constructions comprising insulative sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over the substrate within the gap and having a second thickness over an elevationally highest portion of the wordline constructions, the second thickness being less than the first thickness;
• and
• d) a layer of boron containing silicon oxide comprising material over the substantially boron free silicon oxide comprising material.

An integrated circuit comprising:

• a) a semiconductive substrate;
• b) a pair of wordline constructions on selected portions of the substrate, the wordline constructions comprising insulative sidewall spacers and being separated by a gap therebetween in areas where the wordline constructions do not cover the substrate;
• c) an as-deposited layer of substantially boron free silicon oxide comprising material having a first thickness over the substrate within the gap that completely fills the gap and having a second thickness less than the first thickness over caps flanked by spacers of the wordline constructions;
• and
• d) a layer of boron containing silicon oxide comprising material over the substantially boron free silicon oxide comprising material.