Semiconductor device
AssigneeZarlink Semiconductor Inc.
InventorMartin Clive Wilson
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a substrate (11) having an insulating layer (12) formed on a surface thereof, and a silicon layer (13) located on a surface of the insulating layer. A trench (14) extends from a surface of the silicon layer (13) through the insulating layer (12) and into the substrate (11). An insulating liner (14a) is located on the side walls and the base of the trench (14), and an in-fill (14b) of thermally-conductive material is formed within the insulating liner. The insulating liner (14a), the in-fill material (14b) and the distance over which the trench 14) extends into the substrate (11) are such as to promote flow of heat from the silicon layer (13) to the substrate.
Claims14
A semiconductor device comprising a substrate having an insulating layer formed on a surface thereof, a semiconductor material layer located on a surface of the insulating layer, a trench that extends from a surface of the semiconductor material layer through the insulating layer and into the substrate, an insulating liner located on the side walls and the base of the trench, and an in-fill of thermally-conductive material within the insulating liner, wherein the insulating liner, the in-fill material and the distance over which the trench extends into the substrate are such as to promote flow of heat from the semiconductor material layer to the substrate, the insulating liner completely surrounding the in-fill material at least where the trench extends into the substrate, and said distance is at least 1 μm.
Dependencies are inferred from the claim text.