Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHiroki Ootera
Life of this patent
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Abstract
Noise-reduced semiconductor devices operating at a high frequency band greater than several GHz are disclosed. Also disclosed is a method for manufacturing such semiconductor devices. A trench penetrating through a semiconductor substrate surrounds a noise-generating circuit block and/or a noise-susceptible circuit block, in order to reduce noise propagation through the substrate. Noise-reduced semiconductor devices are fabricated with a conventional silicon wafer instead of an SOI (Silicon on Insulator) wafer, which is manufactured in a complicated process sequence.
Claims8
A semiconductor device comprising;
- a semiconductor substrate having a front surface and a back surface;
- a trench, surrounding a region on the front surface of the semiconductor substrate and penetrating through the semiconductor substrate from the front surface to the rear surface, to suppress noise level in the region;
- a semiconductor element in the semiconductor substrate at the front surface;
- and
- an insulating layer on the back surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface;
- a first trench, surrounding a region on the front surface of the semiconductor substrate and penetrating through the semiconductor substrate from the front surface to the rear surface, to suppress noise level in the region;
- a semiconductor element in the semiconductor substrate at the front surface;
- and
- a second trench on the front surface of the semiconductor substrate and penetrating through the semiconductor substrate from the front surface to the back surface, the second trench surrounding the first trench.
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface;
- a trench transverse to the front surface, penetrating through the semiconductor substrate, and surrounding a region of the semiconductor substrate which is a noise generation source;
- a semiconductor element on said semiconductor substrate;
- and
- an insulating layer on the back surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface;
- a plurality of parallel trenches transverse to the front surface, penetrating through the semiconductor substrate, and surrounding a region of the semiconductor substrate which is a noise generation source;
- and
- a semiconductor element on said semiconductor substrate.
Dependencies are inferred from the claim text.