Semiconductor device for providing a noise shield
AssigneeOki Electric Industry Co., Ltd.
InventorTadamasa Murakami
Life of this patent
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Abstract
A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the first guard ring with a prescribed gap therebetween. A metal film is formed opposing to each guard ring with an insulating film interposed therebetween; these metal films are connected to the opposing guard rings by interlayer wires. The metal films are each connected to external terminals providing a standard potential by individual metal wires from their respective electrodes.
Claims3
A semiconductor device comprising:
- a circuit region including transistors formed on a first conductivity type semiconductor substrate;
- a first guard ring of a high concentration, first conductivity type ion diffused region formed around said circuit region;
- a diffused region in which a high concentration of second conductivity type ions are diffused to surround said first guard ring;
- a second guard ring of a first conductivity type ion diffused region formed around said diffused region;
- a first metal film pattern formed opposing to said first guard ring with an insulating film interposed therebetween and that is connected to the first guard ring by a plurality of interlayer wires;
- a second metal film pattern formed opposing to said second guard ring with said insulating film interposed therebetween and that is connected to the second guard ring by a plurality of interlayer wires;
- a first metal wire connecting said first metal film pattern to an external terminal to which a standard potential is provided;
- and
- a second metal wire connecting said second metal film pattern to said external terminal.
A semiconductor device comprising:
- a circuit region including transistors formed on a semiconductor substrate;
- a first guard ring of an ion diffused region formed around said circuit region;
- a second guard ring of a high concentration ion diffused region formed around said first guard ring with a prescribed gap therebetween;
- an insulating region of insulting material formed on said semiconductor substrate between said first and second guard rings;
- a first metal film pattern formed opposing to said first guard ring with an insulating film interposed therebetween and that is connected to the first guard ring by a plurality of interlayer wires;
- a second metal film pattern formed opposing to said second guard ring with said insulating film interposed therebetween and that is connected to the second guard ring by a plurality of interlayer wires;
- a first metal wire connecting said first metal film pattern to an external terminal to which a standard potential is provided;
- and
- a second metal wire connecting said second metal film pattern to said external terminal.
Dependencies are inferred from the claim text.