Lateral conduction superjunction semiconductor device
AssigneeInternational Rectifier Corporation
InventorsDaniel M. Kinzer, Srikant Sridevan
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Abstract
A lateral conduction superjunction semiconductor device has a plurality of spaced vertical trenches in a junction receiving layer of P− silicon. An N− diffusion lines the walls of the trench and the concentration and thickness of the N− diffusion and P− mesas are arranged to deplete fully in reverse blocking operation. A MOSgate structure is connected at one end of the trenches and a drain is connected at its other end. An N− further layer or an insulation oxide layer may be interposed between a P− substrate and the P− junction receiving layer.
Claims28
A lateral conductive superjunction semiconductor device comprising:
- a trench receiving layer of one of the conductivity types supported atop a substrate and having an upper surface;
- a plurality of spaced laterally extending trenches formed into said trench-receiving layer;
- a diffusion of the other of said conductivity types extending into the walls of said trenches and having a given depth and a given concentration;
- said trenches defining mesas between them of a given width and a given concentration;
- a drain region of said other of said conductivity types extending into said trench receiving layer and disposed at one end of said trenches;
- a MOSgate structure including a source region, base region and a gate electrode disposed at the other end of said trenches;
- the thickness and concentration of said mesas and said diffusions being selected to cause each to fully deplete under blocking voltage conditions, wherein each of said mesas extends between said drain region and said MOSgate structure.
Dependencies are inferred from the claim text.