Mos field effect transistor and mos capacitor
AssigneeSemiconductor Technology Academic Research Center
InventorAnri Nakajima
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Abstract
A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm. A method for manufacturing such a semiconductor device is also disclosed.
Claims13
A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between;
- wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm.
A method for manufacturing a semiconductor device comprising a silicon substrate and an insulating film adjacent thereto, which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between, and contains an intermediate film that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm;
- wherein the intermediate layer is formed by atomic layer deposition.
Dependencies are inferred from the claim text.