Non-crystalline oxides for use in microelectronic, optical, and other applications

A non-crystalline oxide represented by the formula (II):

• (Al2O3)j(MnOm)k (II)
• wherein:
• Al is aluminum;
• O is oxygen;
• and
• M is hafnium (Hf) or zirconium (Zr), n is 1, m is 2, j is 4, and k is 1.

A field effect transistor comprising:

• an integrated circuit substrate having a first surface;
• source and drain regions in said substrate at said first surface in a spaced apart relationship;
• and
• a gate insulating layer on said substrate at said first surface between said spaced apart source and drain regions, said gate insulating layer comprising a non-crystalline oxide represented by the formula (II):
• (Al2O3)j(MnOm)k (II)
• wherein:
• Al is aluminum, O is oxygen, M is selected from the group consisting of scandium (Sc), titanium (Ti), zirconium (Zr) and hafnium (Hf), j ranges from about 0.5 to about 4.5, k is equal to about 1, n ranges from about 0.5 to about 2.5, and m ranges from about 1.5 to about 3.5.

A field effect transistor comprising:

• an integrated circuit substrate having a first surface;
• source and drain regions in said substrate at said first surface in a spaced apart relationship;
• and
• a gate insulating layer on said substrate at said first surface between said spaced apart source and drain regions, said gate insulating layer comprising a non-crystalline oxide represented by the formula (II):
• (Al2O3)j(MnOm)k (II)
• wherein:
• Al is aluminum, O is oxygen, M is selected from the group consisting of scandium (Sc), lanthanum (La), actinium (Ac), titanium (Ti), zirconium (Zr), hafnium (Hf), and rutherfordium (Rf), j ranges from about 0.5 to about 4.5, k is equal to about 1, n ranges from about 0.5 to about 2.5, and m ranges from about 1.5 to about 3.5, wherein the substrate comprises a material selected from the group consisting of a Group III-V binary alloy, a Group III-V quaternary alloy, a Group III-nitride alloy, and combinations thereof.

A field effect transistor comprising:

• an integrated circuit substrate having a first surface;
• source and drain regions in said substrate at said first surface in a spaced apart relationship;
• and
• a gate insulating layer on said substrate at said first surface between said spaced apart source and drain regions, said gate insulating layer comprising a non-crystalline oxide represented by the formula (II):
• (Al2O3)j(MnOm)k (II)
• wherein:
• Al is aluminum, O is oxygen, M is selected from the group consisting of scandium (Sc), lanthanum (La), actinium (Ac), titanium (Ti), zirconium (Zr), hafnium (Hf), and rutherfordium (Rf), j ranges from about 0.5 to about 4.5, k is equal to about 1, n ranges from about 0.5 to about 2.5, and m ranges from about 1.5 to about 3.5, wherein the substrate comprises a Group III-V binary alloy selected from the group consisting of (Ga,Al)As, (In,Ga)As, and combinations thereof.

A field effect transistor comprising:

• an integrated circuit substrate having a first surface;
• source and drain regions in said substrate at said first surface in a spaced apart relationship;
• and
• a gate insulating layer on said substrate at said first surface between said spaced apart source and drain regions, said gate insulating layer comprising a non-crystalline oxide represented by the formula (II):
• (Al2O3)j(MnOm)k (II)
• wherein:
• Al is aluminum, O is oxygen, M is selected from the group consisting of scandium (Sc), lanthanum (La), actinium (Ac), titanium (Ti), zirconium (Zr), hafnium (Hf), and rutherfordium (Rf), j ranges from about 0.5 to about 4.5, k is equal to about 1, n ranges from about 0.5 to about 2.5, and m ranges from about 1.5 to about 3.5, wherein M is hafnium (Hf) or zirconium (Zr), n is 1, m is 2, j is 4, and k is 1.