Semiconductor device and method of manufacturing same

A semiconductor device comprising:

• an SOI substrate having respectively a semiconductor substrate, a dielectric layer, and a semiconductor layer;
• a transistor having a drain region and a source region respectively formed in said semiconductor layer;
• a gate electrode formed via a gate dielectric film on a channel region sandwiched between said drain region and said source region;
• an interlayer dielectric film formed on said transistor;
• a drain wiring and a source wiring formed on said interlayer dielectric film;
• a first conductor formed in said interlayer dielectric film and connecting said drain wiring to said drain region;
• a second conductor formed in said interlayer dielectic film and connecting said source wiring to said source region;
• said drain region including,
• a first part adjacent to said channel region, and
• a second part formed to protrude from said first part of the drain region so that a part of outer peripheries of said second part of said drain region extends away from said gate electrode in a plan view;
• and
• said first conductor is connected to said second part of said drain region.