Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions
AssigneeAdvanced Micro Devices, Inc.
InventorsBin Yu, Ralf van Bentum
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Abstract
A semiconductor-on-insulator (SOI) device. The SOI device includes a substrate having a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer. The active layer has an active region defined by isolation regions, the active region having a source and a drain with a body disposed therebetween. The source and the drain have a selectively grown silicon-germanium region disposed under an upper layer of selectively grown silicon. The silicon-geranium regions form heterojunction portions respectively along the source/body junction and the drain/body junction.
Claims10
A semiconductor-on-insulator (SOI) device, comprising:
- a substrate having a buried oxide layer disposed thereon;
- and
- an active layer disposed on the buried oxide layer and isolated from the substrate by the buried oxide layer, the active layer having an active region defined by isolation regions, the active region having a source and a drain with a silicon body disposed therebetween, each of the source and the drain having:
- a silicon extension, each extension respectively forming a portion of a source/body junction and a drain/body junction;
- and
- a selectively grown silicon-germanium region disposed under an upper layer of selectively grown silicon, respective silicon-germanium region and the silicon body interfaces defining respective heterojunction portions of the source/body junction and the drain/body junction, wherein an upper surface of each silicon-germanium region has a height equal to or lower than a junction depth of the source and drain extensions.
A semiconductor-on-insulator (SOI) device, comprising:
- a substrate having a buried oxide layer disposed thereon;
- and
- an active layer disposed on the buried oxide layer and isolated from the substrate by the buried oxide layer, the active layer having an active region defined by isolation regions, the active region having a source and a drain with a silicon body disposed therebetween, one of the source or the drain having:
- a silicon extension, the extension respectively forming a portion of a junction with the body;
- and
- a selectively grown silicon-germanium region disposed under an upper layer of selectively grown silicon, the silicon-germanium region and silicon body interface defining a heterojunction portion of the junction with the body, wherein an upper surface of the silicon-germanium region has a height equal to or lower than a junction depth of the extension.
Dependencies are inferred from the claim text.