Dynamic threshold voltage MOS transistor fitted with a current limiter
AssigneeCommissariat a l'Energie Atomique
InventorJean-Luc Pelloie
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Abstract
The invention concerns a semi-conductor device comprising on a substrate: a first dynamic threshold voltage MOS transistor (10), with a gate (116), and a channel (111) of a first conductivity type, and a current limiter means (20) connected between the gate and the channel of said first transistor. In accordance with the invention, this first transistor is fitted with a first doped zone (160) of the first conductivity type, connected to the channel, and the current limiter means comprises a second doped zone (124) of a second conductivity type, placed against the first doped zone and electrically connected to the first zone by an ohmic connection. Application to the manufacture of CMOS circuits.
Claims11
A semiconductor device formed on a substrate, comprising:
- a first dynamic threshold voltage MOS transistor having a gate and a channel of a first conductivity type;
- a first doped zone of the first conductivity type coupled to the channel of said first MOS transistor;
- and
- a transistor or diode type current limiter coupled between the gate of said first MOS transistor and said first doped zone, said current limiter comprising a second doped zone of a second conductivity type physically disposed against and in ohmic connection with said first doped zone.
Dependencies are inferred from the claim text.