Integrated circuit having a barrier structure

An integrated circuit comprising:

• a first device;
• a second device;
• a first layer coupling the first device to the second device capable of blocking oxygen atom migration;
• a second layer coupling the first device to the second device capable of blocking substrate atom migration;
• and
• a structure encircling the first and second layers, and the first and second are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• a first layer coupling the first device to the second device capable of blocking silicon atom diffusion;
• a second layer coupling the first device to the second device capable of blocking oxygen atom migration;
• and
• a structure encircling the first and second layers, and the first and second layers are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• a multilayer contact including ruthenium silicide used as an oxygen barrier and an atomic substrate migration barrier, the multilayer contact coupling the first device to the second device;
• and
• an oxide ring encircling the ruthenium silicide and the atomic substrate migration barrier, wherein the ruthenium silicide and the atomic substrate migration barrier are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• one or more layers coupling the first device to the second device, at least one of the one or more layers is capable of blocking oxygen atom migration and at least one of the one or more layers is capable of restricting atomic substrate migration;
• and
• an oxide ring structure encircling at least two of the one or more layers, which are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• one or more layers electrically coupling the first device to the second device, at least one of the one or more layers is capable of blocking the diffusion of silicon and at least one of the one or more layers is capable of restricting oxygen atom migration;
• and
• an oxide ring structure encircling at least one of the one or more layers, which is electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• a contact coupling the first device to the second device, the contract coupling including a first barrier for restricting oxygen migration and a second barrier for restricting substrate atom migration;
• and
• a barrier structure of silicon nitride encircling the contact and the first and second barriers, which are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• one or more layers coupling the first device to the second device, at least one of the one or more layers including platinum-iridium, which restricts oxygen atom migration, and at least one of the one or more layers restricting substrate atom migration;
• and
• a structure encircling the one or more layers, where the one or more layers are electrically conductive.

An integrated circuit comprising:

• a first device;
• a second device;
• one or more layers coupling the first device to the second device, at least one of the one or more layers including platinum-rhodium, which restricts oxygen atom migration, and at least one of the one or more layers restricting substrate atom migration;
• and
• a structure encircling at least two of the one or more layers, which are electrically conductive.